Method for preparing carbon doped oxide insulating layers
US6316063A · kind A · utility
51Cited by
2References
18Claims
0Family size
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Key dates
| Filing date | Dec 15, 1999 |
| Grant date | Nov 13, 2001 |
| Priority date | — |
| Expiry date | Dec 15, 2019 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/30
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for forming carbon doped oxide layers by chemical vapor deposition using a source gas that includes: (a) an alkyl-alkoxysilane having the formula (R.sup.1).sub.n (R.sup.2 O).sub.4-n Si where R.sup.1 and R.sup.2 are lower alkyl groups and n is an integer between 0 and 3, inclusive, with the proviso that when R.sup.1 and R.sup.2 are methyl groups, n is not equal to 2; (b) a fluorinated alkoxysilane having the formula (R.sup.3 O).sub.n SiF.sub.4-n where R.sup.3 is a lower alkyl group and n is an integer between 1 and 3, inclusive, or a combination thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.