Microwave annealing
US6316123A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 27, 2000 |
| Grant date | Nov 13, 2001 |
| Priority date | — |
| Expiry date | Jan 27, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12674
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention is directed to a method of forming a new material layer or region near an interface region of two dissimilar materials, and an optional third layer, wherein at least one of said dissimilar materials or optional third is capable of being heated by microwave energy. The method of the present invention includes a step of irradiating a structure containing at least two dissimilar materials and an optional third layer under conditions effective to form the new material layer in the structure. An apparatus for conducting the microwave heating as well as the structures formed from the method are also described herein.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.