Pattern forming method
US6316163A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 30, 1998 |
| Grant date | Nov 13, 2001 |
| Priority date | — |
| Expiry date | Sep 30, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3174
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method for forming patterns, in which pattern transfer to the same photosensitive material on a first layer is carried out using both light exposure and charged particle beam exposure, comprises the steps of performing a predetermined geometric operation between data associated with a pattern to be transferred to the first layer and data associated with a pattern to be transferred to a second layer different from the first layer, separating the pattern data associated with the pattern to be transferred to the first layer into first exposure pattern data for charged particle beam exposure and second exposure pattern data for light exposure, and performing pattern transfer on to the first layer based on the result of the separation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.