Semiconductor device and method for fabricating the same
US6316297A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Nov 8, 1999 |
| Grant date | Nov 13, 2001 |
| Priority date | — |
| Expiry date | Nov 8, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28587
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The method for fabricating a semiconductor device comprises the steps of forming on a semiconductor substrate a gate electrode, and an eave-shaped film of an inorganic material formed on the upper surface of the gate electrode and having a eave-shaped portion projected beyond the edge of the gate electrode; and ion-implanting a dopant with the gate electrode as a mask and with the eave-shaped portion of the eave-shaped film as a through film to form a first diffusion layer in the semiconductor substrate immediately below the eave-shaped portion and a second diffusion layer which is connected to the first diffusion layer, and is deeper and has a higher dopant concentration than the first diffusion layer, in the semiconductor substrate in a region where the eave-shaped film is not formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.