Method for obtaining a thin film in particular semiconductor, comprising a protected ion zone and involving an ion implantation
US6316333A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 14, 1999 |
| Grant date | Nov 13, 2001 |
| Priority date | — |
| Expiry date | Jul 14, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6744
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention relates to a process for obtaining a thin film from a substrate, the film being delimited in the substrate by ionic implantation and by heat treatment inducing a fracture line along which the film can be separated from the rest of the substrate. A particular area, for example composed of a gate oxide layer (15) and the channel area (19) of a MOS transistor (12) created in the substrate region (10) intended to form the tin film (20), this area may be protected by ionic implantation by masking using the transistor gate (16), which does not prevent the fracture from occurring provided that the width of the area does not exceed a limiting dimension determined for the material forming the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.