Method of forming conductive connections
US6316353A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Feb 18, 1999 |
| Grant date | Nov 13, 2001 |
| Priority date | — |
| Expiry date | Feb 18, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/1078
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a conductive connection between a first region and a second region includes forming a first titanium comprising layer over and in electrical connection with the first region. The first layer is exposed to a nitrogen containing plasma effective to transform at least an outer portion thereof into a second layer comprising titanium nitride. An elemental titanium comprising third layer is formed over the second layer. The third layer is exposed to a nitrogen containing plasma effective to transform at least an outer portion thereof into a layer comprising titanium nitride. The second region is formed over and in electrical connection with the transformed third layer. A method of forming a conductive line includes a conductively doped silicon comprising semiconductive material being formed. Titanium is deposited over the semiconductive material to form a first layer in electrical connection with the semiconductive material. The first layer is exposed to a nitrogen containing plasma effective to transform at least an outer portion thereof into a second layer comprising titanium nitride. Titanium is deposited to form an elemental titanium comprising third layer over th…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.