Chemical-mechanical polishing method
US6316365A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 1, 2000 |
| Grant date | Nov 13, 2001 |
| Priority date | — |
| Expiry date | Dec 1, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31053
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a method for chemically-mechanically polishing a substrate comprising tantalum and a conductive metal (other than tantalum). The method comprises (a) applying to the substrate a conductive metal-selective polishing composition and a metal oxide abrasive, (b) selectively removing at least a portion of the conductive metal as compared to the tantalum from the substrate, (c) applying to the substrate a tantalum-selective polishing composition and a metal oxide abrasive, and (d) removing at least a portion of the tantalum as compared to the conductive metal from the substrate. In one embodiment, the conductive metal-selective polishing composition is any such polishing composition, and the tantalum-selective polishing composition comprises a persulfate compound and a passivation film-forming agent for the conductive metal. In another embodiment, the conductive metal-selective polishing composition comprises a persulfate compound and optionally a passivation film-forming agent for the conductive metal, and the conductive metal-selective polishing composition or the polishing process is adjusted to render the conductive metal-selective polishing composition…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.