Shumin Wang
51Patents
18h-index
55Co-inventors
87Inventor score
Filing activity: Sep 24, 1996 → Nov 22, 2024
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6063306A | Chemical mechanical polishing slurry useful for copper/tantalum substrate | Electricity | 191 | Expired |
| US5783489A | Multi-oxidizer slurry for chemical mechanical polishing | Chemistry; Metallurgy | 171 | Expired |
| US6582623B1 | CMP composition containing silane modified abrasive particles | Electricity | 113 | Expired |
| US6217416A | Chemical mechanical polishing slurry useful for copper/tantalum substrates | Electricity | 98 | Expired |
| US6126853A | Chemical mechanical polishing slurry useful for copper substrates | Electricity | 65 | Expired |
| US6177026A | CMP slurry containing a solid catalyst | Electricity | 43 | Expired |
| US7044836B2 | Coated metal oxide particles for CMP | Electricity | 35 | Expired |
| US6447371B2 | Chemical mechanical polishing slurry useful for copper/tantalum substrates | Electricity | 32 | Expired |
| US6646348B1 | Silane containing polishing composition for CMP | Electricity | 28 | Expired |
| US6039891A | Multi-oxidizer precursor for chemical mechanical polishing | Chemistry; Metallurgy | 28 | Expired |
| US6432828B1 | Chemical mechanical polishing slurry useful for copper substrates | Chemistry; Metallurgy | 26 | Expired |
| US9952297B2 | Parallel plate transmission line for broadband nuclear magnetic resonance imaging | Physics | 26 | Active |
| US6033596A | Multi-oxidizer slurry for chemical mechanical polishing | Chemistry; Metallurgy | 26 | Expired |
| US6435947B2 | CMP polishing pad including a solid catalyst | Electricity | 24 | Expired |
| US6309560A | Chemical mechanical polishing slurry useful for copper substrates | Electricity | 23 | Expired |
| US6395693B1 | Cleaning solution for semiconductor surfaces following chemical-mechanical polishing | Chemistry; Metallurgy | 20 | Expired |
| US6689692B1 | Composition for oxide CMP | Electricity | 19 | Expired |
| US6316366A | Method of polishing using multi-oxidizer slurry | Chemistry; Metallurgy | 18 | Expired |
| US6362106B1 | Chemical mechanical polishing method useful for copper substrates | Electricity | 16 | Expired |
| US6852632B2 | Method of polishing a multi-layer substrate | Chemistry; Metallurgy | 15 | Expired |
| US6592776B1 | Polishing composition for metal CMP | Electricity | 14 | Expired |
| US6362104B1 | Method for polishing a substrate using a CMP slurry | Electricity | 14 | Expired |
| US6541434B2 | Cleaning solution for semiconductor surfaces following chemical-mechanical polishing | Chemistry; Metallurgy | 14 | Expired |
| US6976905B1 | Method for polishing a memory or rigid disk with a phosphate ion-containing polishing system | Chemistry; Metallurgy | 13 | Expired |
| US6316365A | Chemical-mechanical polishing method | Electricity | 13 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.