Semiconductor structure having a predetermined alpha-silicon carbide region, and use of this semiconductor structure

US6316791A · kind A · utility

Assignee

• Siced Electronics Development GmbH & Co. KG · DE

Inventors

• Reinhold Schorner · Großenseebach, DE
• Dietrich Stephani · Bubenreuth, DE
• Dethard Peters · Edenkoben, DE
• Peter Friedrichs · Koblenzer Straße, DE

Key dates

• Filing date: Feb 22, 2000
• Grant date: Nov 13, 2001
• Expiry date: Feb 22, 2020

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/668

Abstract

A semiconductor structure includes at least one .alpha.-silicon carbide region and an electrically insulating region, e.g. made of an oxide layer, and an interface located between them. The selection of an .alpha.-silicon carbide polytype having a smaller energy gap than that of the 6H silicon carbide polytype for at least one region near the interface results in a high charge carrier mobility in this region.