Peter Friedrichs
21Patents
8h-index
19Co-inventors
72Inventor score
Filing activity: Jul 18, 1997 → Nov 11, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6936850B2 | Semiconductor device made from silicon carbide with a Schottky contact and an ohmic contact made from a nickel-aluminum material | Electricity | 70 | Expired |
| US6316791A | Semiconductor structure having a predetermined alpha-silicon carbide region, and use of this semiconductor structure | Electricity | 61 | Expired |
| US6822842B2 | Switching device for switching at a high operating voltage | Electricity | 34 | Expired |
| US7777553B2 | Simplified switching circuit | Electricity | 32 | Active |
| US8637922B1 | Semiconductor device | Electricity | 24 | Active |
| US7082020B2 | Electronic switching device and an operating method thereof | Electricity | 14 | Expired |
| US7206178B2 | Electronic switching device | Electricity | 14 | Expired |
| US6693322B2 | Semiconductor construction with buried island region and contact region | Electricity | 10 | Expired |
| US6667495B2 | Semiconductor configuration with ohmic contact-connection and method for contact-connecting a semiconductor configuration | Emerging Cross-Sectional Technologies | 7 | Expired |
| US6117751A | Method for manufacturing a mis structure on silicon carbide (SiC) | Emerging Cross-Sectional Technologies | 4 | Expired |
| US7646026B2 | SiC-PN power diode | Electricity | 4 | Active |
| US8102012B2 | Transistor component having a shielding structure | Electricity | 4 | Active |
| US7763506B2 | Method for making an integrated circuit including vertical junction field effect transistors | Electricity | 4 | Active |
| US8854087B2 | Electronic circuit with a reverse conducting transistor device | Electricity | 3 | Active |
| US7071503B2 | Semiconductor structure with a switch element and an edge element | Electricity | 3 | Expired |
| US8772140B2 | Production method for a unipolar semiconductor component and semiconductor device | Electricity | 1 | Active |
| US6815351B2 | Method for contacting a semiconductor configuration | Emerging Cross-Sectional Technologies | 1 | Expired |
| US7482068B2 | Lightly doped silicon carbide wafer and use thereof in high power devices | Emerging Cross-Sectional Technologies | 1 | Expired |
| US8803160B2 | Lightly doped silicon carbide wafer and use thereof in high power devices | Emerging Cross-Sectional Technologies | 0 | Active |
| US8097524B2 | Lightly doped silicon carbide wafer and use thereof in high power devices | Emerging Cross-Sectional Technologies | 0 | Active |
| US12136623B2 | Multi-device semiconductor chip with electrical access to devices at either side | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.