Lateral high voltage semiconductor device with protective silicon nitride film in voltage withstanding region
US6316794A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 30, 1998 |
| Grant date | Nov 13, 2001 |
| Priority date | — |
| Expiry date | Dec 30, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor apparatus is provided which includes a lateral high-voltage semiconductor device which comprises a silicon substrate, a pair of main electrodes formed on the silicon substrate, and a silicon oxide film formed on the silicon substrate, such that at least a part of the silicon oxide film is located between the main electrodes. The semiconductor device further includes a voltage withstanding structure formed on the silicon oxide film, which structure includes a first silicon nitride film having a refractive index of not lower than 2.8, and a second silicon nitride film formed on the first silicon nitride film and having a refractive index of not higher than 2.2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.