Single crystal silicon sensor with high aspect ratio and curvilinear structures

US6316796A · kind A · utility

Assignee

• Lucas NovaSensor · US

Inventors

• Kurt E. Petersen · San Jose, US
• Nadim Maluf · Los Altos, US
• Wendell McCulley · San Jose, US
• John Logan · Danville, US
• Erno Klaasen · Los Altos, US
• Jan Mark Noworolski · Burlingame, US

Key dates

• Filing date: May 23, 1996
• Grant date: Nov 13, 2001
• Expiry date: May 23, 2016

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S73/01
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

In one aspect, the invention provides a semiconductor sensor which includes a first single crystal silicon wafer layer. A single crystal silicon structure is formed in the first wafer layer. The structure includes two oppositely disposed substantially vertical major surfaces and two oppositely disposed generally horizontal minor surfaces. The aspect ratio of major surface to minor surface is at least 5:1. A carrier which includes a recessed region is secured to the first wafer layer such that said structure is suspended opposite the recessed region.