Configuration for self-referencing ferroelectric memory cells

US6317356A · kind A · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Kurt Hoffmann · Taufkirchen, DE
• Oskar Kowarik · Grafing, DE

Key dates

• Filing date: Oct 20, 2000
• Grant date: Nov 13, 2001
• Expiry date: Oct 20, 2020

Classification

• Technology area (CPC G): Physics
• CPC primary: G11C11/22
• WIPO field: Computer technology
• WIPO sector: Electrical engineering

Abstract

A configuration for self-referencing a ferroelectric memory cell reads out the ferroelectric memory cell successively while a bit line is precharged to two different, opposing voltages. The voltage values read out from the ferroelectric memory cell are temporarily stored respectively in a first and a second capacitor and then fed to an evaluator circuit.