Method and apparatus for reading memory cells of a resistive cross point array
US6317375A · kind A · utility
74Cited by
5References
16Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 31, 2000 |
| Grant date | Nov 13, 2001 |
| Priority date | — |
| Expiry date | Aug 31, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1673
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A sense amplifier applies an operating potential to a selected bit line and an equal potential to a subset of unselected lines during a read operation on a memory cell in a resistive cross point array of an information storage device. Before a resistance state of the selected memory cell is sensed, however, an input of the sense amplifier is forced to a known, consistent condition. The sense amplifier input may be forced to the known, consistent condition by pulling up the input to an array voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.