Optical device including carbon-doped contact layers
US6317444A · kind A · utility
42Cited by
4References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 12, 1998 |
| Grant date | Nov 13, 2001 |
| Priority date | — |
| Expiry date | Jun 12, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8262
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The invention is an optical device and method of fabrication which mitigates the problem of Zn migration in the cladding and waveguide regions. The contact region includes carbon, which acts as a p-type dopant in ternary semiconductor material. The contact layer is made of InGaAs or InGaAsP, and the invention is most advantageously used in an electroabsorption modulated laser or capped mesa buried heterostructure laser.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.