Chemical-mechanical polishing system and method for integrated spin dry-film thickness measurement

US6319093A · kind A · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Richard J. Lebel · Williston, US
• Frederic Maurer · Valhalla, US
• Rock Nadeau · Jericho, US
• Paul Smith · Fort Collins, US
• Hemantha K. Wickramasinghe · Chappaqua, US
• Theodore G. van Kessel · Millbrook, US

Key dates

• Filing date: Feb 6, 2001
• Grant date: Nov 20, 2001
• Expiry date: Feb 6, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/67253
• WIPO field: Machine tools
• WIPO sector: Mechanical engineering

Abstract

A system and method that integrates film thickness measurements with a chemical-mechanical polishing (CMP) spin-dry tool. By doing so, each wafer can be measured as it comes out of the previous CMP process. Thickness measurement feedback is provided, which controls processing of the wafer and also monitor operational status of a CMP polishing unit prior to completion of the wafer being polished, resulting in significant cost and cycle time reduction through the elimination of tool infrastructure and wafer handling by assuring proper tolerances of the CMP polishing unit are maintained.