Optical method for the characterization of laterally-patterned samples in integrated circuits
US6321601A · kind A · utility
47Cited by
30References
30Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 23, 1999 |
| Grant date | Nov 27, 2001 |
| Priority date | — |
| Expiry date | Sep 23, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N2291/0427
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Disclosed is a method for characterizing a sample having a structure disposed on or within the sample, comprising the steps of applying a first pulse of light to a surface of the sample for creating a propagating strain pulse in the sample, applying a second pulse of light to the surface so that the second pulse of light interacts with the propagating strain pulse in the sample, sensing from a reflection of the second pulse a change in optical response of the sample, and relating a time of occurrence of the change in optical response to at least one dimension of the structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.