Method for conditioning a plasma etch chamber
US6322716A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 30, 1999 |
| Grant date | Nov 27, 2001 |
| Priority date | — |
| Expiry date | Aug 30, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/905
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method for conditioning a plasma etch chamber is presented. A plasma etch chamber is provided, which preferably includes a chuck for supporting a topography. A conditioning process may be performed in the etch chamber. The conditioning process preferably includes positioning a cover topography on or above the chuck. A conditioning feed gas containing (hydro)halocarbons may be introduced into the chamber. A conditioning plasma may be generated from the conditioning feed gas for a conditioning time. Immediately after generating the conditioning plasma is complete, the overall thickness of the cover topography is preferably at least as great as immediately before generating the conditioning plasma. By performing a conditioning process in such a manner, the total cost and complexity of the conditioning process may be reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.