Post plasma ashing wafer cleaning formulation
US6323168A · kind A · utility
21Cited by
8References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 3, 1996 |
| Grant date | Nov 27, 2001 |
| Priority date | — |
| Expiry date | Jul 3, 2016 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC11D2111/22
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A semiconductor wafer cleaning formulation for use in post plasma ashing semiconductor fabrication comprising the following components in the percentage by weight ranges shown: chelating agent 1-15% water 25-99% polar organic solvent 0-60% In the preferred embodiment the chelating agent is catechol (1,2-dihydroxybenzene) and the polar organic solvent is gamma butyrolactone (BLO).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.