Low-impedance high-density deposited-on-laminate structures having reduced stress
US6323435A · kind A · utility
21Cited by
26References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 29, 1999 |
| Grant date | Nov 27, 2001 |
| Priority date | — |
| Expiry date | Jul 29, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2203/1476
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Low-impedance high density deposited-on-laminate (DONL) structures having reduced stress features reducing metallization present on the laminate printed circuit board. In this manner, reduced is the force per unit area exerted on the dielectric material disposed adjacent to the laminate material that is typically present during thermal cycling of the structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.