Write-once thin-film memory
US6324093A · kind A · utility
90Cited by
2References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 15, 2000 |
| Grant date | Nov 27, 2001 |
| Priority date | — |
| Expiry date | Sep 15, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/14
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A data storage device includes a group of memory cells. Write-once operations may be performed by damaging the thin-film barriers of at least some of the memory cells. The data storage device may be a Magnetic Random Access Memory ("MRAM") device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.