Semiconductor integrated circuit device, memory module, storage device and the method for repairing semiconductor integrated circuit device
US6324103A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 9, 2001 |
| Grant date | Nov 27, 2001 |
| Priority date | — |
| Expiry date | Jan 9, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2029/1208
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
To improve the efficiency for repairing a defect of a large-scale integrated circuit. A semiconductor integrated circuit device comprises, a central processing unit (10), an electrically reprogrammable nonvolatile memory (11) and a volatile memory (12, 13) while sharing a dat bus (16), and utilizes the stored information of the nonvolatile memory so as to repair a defect of the volatile memory. This volatile memory includes volatile storage circuit (12AR, 13AR) for latching the repair information for repairing a defective normal memory cell with a redundancy memory cell. The nonvolatile memory reads out the repair information from itself in response to an instruction to initialize the semiconductor integrated circuit device. In response to the initializing instruction, the volatile storage circuit latches the repair information from the nonvolatile memory. Any fuse program circuit is not needed for the detect repair, but a defect to occur after a burn-in can be newly repaired so that the new defect can be repaired even after the packaging over a circuit substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.