Method for fabricating epitaxy layer

US6326262A · kind A · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Dietmar Temmler · Dresden, DE
• Herbert Benzinger · Birkenfeld, DE
• Wolfram Karcher · Osterburken, DE
• Catharina Pusch · Hersbruck, DE
• Martin Schrems · Langenbruck, DE
• Jurgen Faul · Radebeul, DE

Key dates

• Filing date: Aug 30, 2000
• Grant date: Dec 4, 2001
• Expiry date: Aug 30, 2020

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B12/373
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method of fabricating an epitaxial layer includes providing a substrate having a substrate surface with an at least partly uncovered monocrytalline region, and at least one electrically insulating region adjoining the monocrystalline region and being at least partly surrounded by the monocrystalline region. An epitaxial layer is grown on the monocrystalline region. The electrically insulating region is at least partly overgrown laterally with the epitaxial layer, thereby forming an epitaxial closing joint above the electrically insulating region due to the overgrowth. The epitaxial layer is at least partly removed above the electrically insulating region, thereby the epitaxial closing joint is at least partly removed.