Integrated circuit isolation

US6326281A · kind A · utility

Assignee

• TEXAS INSTRUMENTS INCORPORATED · US

Inventors

• Katherine E. Violette · Dallas, US
• Rick L. Wise · Fairview, US
• Stanton Petree Ashburn · McKinney, US
• Mahalingam Nandakumar · Richardson, US
• Douglas T. Grider · McKinney, US

Key dates

• Filing date: Sep 23, 1999
• Grant date: Dec 4, 2001
• Expiry date: Sep 23, 2019

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/762
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Silicon substrate isolation by epitaxial growth of silicon through windows in a mask made of silicon nitride (202) on silicon oxide (201) with the silicon oxide etched to undercut the silicon nitride; the mask is on a silicon substrate.