Method of forming copper dual damascene structure
US6326306A · kind A · utility
13Cited by
7References
29Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 15, 2001 |
| Grant date | Dec 4, 2001 |
| Priority date | — |
| Expiry date | Feb 15, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76879
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a copper dual damascene structure is disclosed. The method comprises forming copper lead lines and copper contacts simultaneously and selectively depositing tungsten layers on silicide layers formed on the active regions to complete the copper dual damascene structure and avoid the diffusion of copper into the active regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.