Particle-optical imaging system for lithography purposes
US6326632A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 13, 1999 |
| Grant date | Dec 4, 2001 |
| Priority date | — |
| Expiry date | Oct 13, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/04924
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
In a particle-optical imaging lithography system, an illuminating system comprising a particle source and a first electrostatic lens arrangement produces a particle beam which penetrates a mask foil provided with an orifice structure positioned in the particle beam path. This structure is imaged on a substrate plane by a projection system comprising a second electrostatic lens arrangement. The first and second lens arrangements each comprise, on their respective sides facing the mask holding device, at least one pre- and post-mask electrode, respectively. By applying different electrostatic potentials to the pre- and post-mask electrodes and to the mask foil, the mask foil and the pre-mask electrode form a grid lens with negative refracting power, and the mask foil and the post-mask electrode also form a grid lens with negative refracting power.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.