Method of manufacturing a capacitor in a semiconductor device using a high dielectric tantalum oxide or barium strontium titanate material that is treated in an ozone plasma
US6329237A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 20, 1999 |
| Grant date | Dec 11, 2001 |
| Priority date | — |
| Expiry date | Dec 20, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/682
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is disclosed a method of making a high dielectric capacitor of a semiconductor device using Ta.sub.2 O.sub.5, BST((Ba.sub.1-x Sr.sub.x)TiO.sub.3) etc. of a high dielectric characteristic as a capacitor dielectric film in a very high integrated memory device. The present invention has its object to provide a method of manufacturing a high dielectric capacitor of a semiconductor device, which can effectively remove carbon contained within the thin film after deposition of the BST film and defects of oxygen depletion caused upon deposition of the thin film and which can also remove carbon contained within the thin film after deposition of the tantalum oxide film and defects of oxygen depletion caused upon deposition of the thin film, without further difficult processes or without any deterioration of the electrical characteristic of the capacitor. It employs the technology which is able to effectively removing defects of carbon and oxygen depletion within the thin film, by forming a plasma O.sub.3 gas having a good reactivity and by processing the plasma for the BST thin film and tantalum oxide film. Thus, it can extend the lifetime of the activated oxygen of oxygen, which had b…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.