Method and apparatus to match semiconductor device performance
US6329690A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 22, 1999 |
| Grant date | Dec 11, 2001 |
| Priority date | — |
| Expiry date | Oct 22, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure may include a silicon substrate, a first active device formed in a first region of the silicon substrate, a second active device formed in a second region of the silicon substrate, a first heating device connected thermally to the first active device and a second heating device connected thermally to the second active device. A first temperature sensing device detects a temperature of the first region, a second temperature sensing device detects a temperature of the second region and a circuit activates one of the first heating device and the second heating device in response to a sensed difference in temperature from the first and second temperature sensing devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.