Composition and method for polishing in metal CMP

US6331134A · kind A · utility

Assignee

• Rodel Holdings, Inc. · US

Inventors

• Vikas Sachan · Hockessin, US
• Elizabeth A. (Kegerise) Langlois · Newark, US
• Qianqiu (Christine) Ye · Wilmington, US
• Keith G. Pierce · Colorado Springs, US
• Craig Lack · Wilmington, US
• Terence M. Thomas · Newark, US
• Peter A. Burke · Portland, US
• David Gettman · Bear, US
• Sarah Lane · Elkton, US

Key dates

• Filing date: Jun 10, 1999
• Grant date: Dec 18, 2001
• Expiry date: Jun 10, 2019

Classification

• Technology area (CPC —): General

Abstract

A composition is provided in the present invention for polishing a composite composite semiconductor structure containing a metal layer (such as tungsten, aluminum, or copper), a barrier layer (such as tantalum, tantalum nitride, titanium, or titanium nitride), and an insulating layer (such as SiO.sub.2). The composition comprises an aqueous medium, an abrasive, an oxidant, an organic polymer that attenuates removal of the oxide film having a degree of polymerization of at least 5 and having a plurality of moieties having affinity to surface groups contained on silicon dioxide surfaces. The composition may optionally comprise a complexing agent and/or a dispersant.