Method of improving contact reliability for electroplating
US6331237A · kind A · utility
4Cited by
7References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 1, 1999 |
| Grant date | Dec 18, 2001 |
| Priority date | — |
| Expiry date | Sep 1, 2019 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC25D21/18
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of reducing etching of a seed layer by a plating solution. Prior to introducing the semiconductor wafer with the seed layer into the plating solution, the etching power of the plating solution is diminished.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.