High density flip chip BGA
US6331447A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Apr 20, 2001 |
| Grant date | Dec 18, 2001 |
| Priority date | — |
| Expiry date | Apr 20, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K3/4644
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A new method is provided for mounting high-density flip chip BGA devices. A dielectric layer is first deposited over the first surface of a metal panel. One or more thin film interconnect layers are created on top of the dielectric layer. The interconnect layers are patterned in succession to create metal interconnect pattern. The BUM technology allows for the creation of a succession of layers over the thin film layers. The BUM layers can be used for power or ground distribution and for signal or fan-out interconnect. A cavity is etched on the second surface of the metal panel. A laser is used to create openings for flip chip pad contacts. The panel is subdivided into individual substrates. The method of the invention can also be applied to Land Grid Array and Pin Grid Array devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.