Thin film transistor and producing method thereof
US6331476A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 21, 1999 |
| Grant date | Dec 18, 2001 |
| Priority date | — |
| Expiry date | May 21, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31116
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In producing a thin film transistor used for such devices as a large-sized liquid crystal display panel with a high pixel density, a leftover of an insulating film caused by insufficient etching and a loss of a semiconductor layer caused by overetching are prevented, and a reliable electrical contact between the source and drain electrodes and the semiconductor layer is achieved. These are achieved by (a) forming a contact hole region of a silicon film so that the region has a larger thickness, for example, by making the film to have a plurality of layers, and (b) providing a silicide layer between an electrode metal and the semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.