Removal of polishing residue from substrate using supercritical fluid process
US6331487A · kind A · utility
42Cited by
113References
3Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 27, 2001 |
| Grant date | Dec 18, 2001 |
| Priority date | — |
| Expiry date | Feb 27, 2021 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB08B7/0021
- WIPO fieldChemical engineering
- WIPO sectorChemistry
Abstract
A method of removing polishing residue from a substrate includes placing the substrate in a pressure chamber, pressurizing the pressure chamber, and maintaining the supercritical fluid in contact with the substrate until the polishing residue is removed from the substrate. Following removal of the polishing residue from the substrate, the pressure chamber is flushed and vented.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.