Deposition of low dielectric constant thin film without use of an oxidizer
US6331494A · kind A · utility
58Cited by
4References
39Claims
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Key dates
| Filing date | Dec 30, 1999 |
| Grant date | Dec 18, 2001 |
| Priority date | — |
| Expiry date | Dec 30, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An organic precursor compound is gasified and fed into the reaction chamber of a high density plasma chemical vapor deposition (HDP-CVD) reactor. The organic precursor comprises silicon, oxygen and carbon atoms. No reactive oxygen gas or other oxidizer is used in the reaction chamber. A thin film of carbon-containing low dielectric constant silicon oxide material is deposited and simultaneously etched in the reaction chamber to fill a gap having a high aspect ratio with low dielectric constant insulator material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.