Semiconductor device
US6331733A · kind A · utility
239Cited by
51References
28Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 10, 1999 |
| Grant date | Dec 18, 2001 |
| Priority date | — |
| Expiry date | Aug 10, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K19/17792
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
This invention discloses a semiconductor device including a substrate, at least first, second and third metal layers formed over the substrate, the second metal layer including a plurality of generally parallel bands extending parallel to a first axis, each band comprising a multiplicity of second metal layer strips extending perpendicular to said first axis, and at least one via connecting at least one second metal layer strip with the first metal layer underlying the second metal layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.