Selective growth of ferromagnetic films
US6333067A · kind A · utility
2Cited by
0References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 13, 2001 |
| Grant date | Dec 25, 2001 |
| Priority date | — |
| Expiry date | Jun 13, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24802
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A method of forming the device, includes selective area deposition of a ferromagnetic material on a substrate. The substrate surface is partially covered with material having a crystal structure having at least one symmetry relation with the crystal structure of the ferromagnetic material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.