Planar gas introducing unit of a CCP reactor
US6333601A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Mar 28, 2000 |
| Grant date | Dec 25, 2001 |
| Priority date | — |
| Expiry date | Mar 28, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3266
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A planar gas introducing unit arranged within a capacitively coupled plasma (CCP) reactor includes a top electrode, a gas inlet plate having a plurality of gas inlet holes and a gas reservoir 20 formed between the top electrode and the gas inlet plate. The top electrode includes a plurality of magnets which are arranged such that the magnets operate to substantially prevent an enhanced erosion of the plurality of gas inlet holes. Each of the plurality of magnets can be arranged to correspond to a gas inlet hole such that an axis of each of the plurality of magnets is aligned with an axis of a corresponding gas inlet hole and magnetic fields emitted from the plurality of magnets pass through the gas inlet holes in a direction substantially corresponding to the axis of the corresponding gas inlet hole. The planar gas introducing unit of the present invention prevents plasma enhanced erosion generated at both ends of the gas inlet holes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.