Plasma processing method
US6334929B1 · kind B1 · utility
0Cited by
3References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 29, 1994 |
| Grant date | Jan 1, 2002 |
| Priority date | — |
| Expiry date | Jul 29, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31116
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for improving uniformity across the surface of a substrate during a plasma process such as plasma etching. A conductive plane is formed at the back surface of the substrate. A plasma process is then performed to the front surface of the substrate. The conductive plane may then be removed upon completion of the plasma process and before final processing steps.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.