GaN type semiconductor device fabrication
US6335217B1 · kind B1 · utility
60Cited by
5References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 14, 2000 |
| Grant date | Jan 1, 2002 |
| Priority date | — |
| Expiry date | Mar 14, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/841
Abstract
A GaN type semiconductor layer having a structure is provided which incorporates a substrate having surface which is opposite to a GaN type semiconductor layer and which is made of Ti.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.