Method for making an anti-fuse
US6335228B1 · kind B1 · utility
Assignees
Inventors
Key dates
| Filing date | Dec 30, 1999 |
| Grant date | Jan 1, 2002 |
| Priority date | — |
| Expiry date | Dec 30, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A manufacturing process for producing dynamic random access memories (DRAMs) having redundant components includes steps for concurrently forming normal (i.e. non-fused) contacts to components of the DRAMs and anti-fused contacts to the redundant components. The process by which the normal and anti-fused contacts are made is readily implemented using standard integrated circuit processing techniques. An anti-fuse contact (20) and a normal (i.e. non-fused) contact (10) are formed by opening respective contact areas in a dielectric (110), selectively forming an insulating layer (210) over the anti-fuse contact, applying polysilicon (212, 410) to cover the insulating layer of the anti-fuse contact and to fill the opening over the normal contact. In one embodiment of the invention, the circuit region served by the anti-fuse contact is subject to ion implantation (810) to improve its conductivity before the anti-fuse contact is formed. In another embodiment of the invention, the anti-fuse is formed in an isolated well (1212) on the integrated circuit device and a non-fused contact (1216) to the well is also provided to aid in blowing the anti-fuse.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.