Method of fabricating a high reliable SOI substrate
US6335231B1 · kind B1 · utility
217Cited by
13References
15Claims
0Family size
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Key dates
| Filing date | Aug 31, 1999 |
| Grant date | Jan 1, 2002 |
| Priority date | — |
| Expiry date | Aug 31, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/977
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device with high reliability is provided using an SOI substrate. When the SOI substrate is fabricated by using a technique typified by SIMOX, ELTRAN, or Smart-Cut, a single crystal semiconductor substrate having a main surface (crystal face) of a {110} plane is used. In such an SOI substrate, adhesion between a buried insulating layer as an under layer and a single crystal silicon layer is high, and it becomes possible to realize a semiconductor device with high reliability.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.