Method for improving performance of organic semiconductors in bottom electrode structure
US6335539B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 5, 1999 |
| Grant date | Jan 1, 2002 |
| Priority date | — |
| Expiry date | Nov 5, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K71/60
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method for improving the performance of an organic thin film field effect transistor comprising the steps of: (a) forming a transistor structure having patterned source and drain electrodes; and (b) treating the patterned source and drain electrodes with a thiol compound having the formula, RSH, wherein R is a linear or branched, substituted or unsubstituted, alkyl, alkenyl, cycloalkyl or aromatic containing from about 6 to about 25 carbon atoms under conditions that are effective in forming a self-assembled monolayer of said thiol compound on said electrodes. Organic thin film transistor structures containing the self-assembled monolayer of the present invention are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.