Sol-gel precursor and method for formation of ferroelectric materials for integrated circuits
US6337032B1 · kind B1 · utility
Assignees
Inventors
Key dates
| Filing date | Feb 16, 2000 |
| Grant date | Jan 8, 2002 |
| Priority date | — |
| Expiry date | Feb 16, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N30/8548
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A sol-gel precursor mixture for forming a perovskite ferroelectric material and a method for forming a ferroelectric material are provided. The precursor solution comprises a sol-gel formulation of a mixture of an inorganic salt of at least one metal, and metal-organic compounds of other constituent metals in a suitable pH controlled aqueous solvent mixture to form a stable, clear sol-gel mixture. The precursor solution and method provides for formation of thin layers of other ferroelectric dielectrics and piezoelectric materials, particularly lead containing materials, for application including non-volatile DRAMs, optoelectronic devices relying on non-linear optical properties, and piezoelectric devices, and is compatible with processing for submicron device structures for bipolar, CMOS or bipolar CMOS circuits.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.