Method of forming silicon oxide layer and method of manufacturing thin film transistor thereby
US6337292B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 29, 1999 |
| Grant date | Jan 8, 2002 |
| Priority date | — |
| Expiry date | Oct 29, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/931
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present method of forming a silicon oxide layer comprises providing two frequency excitation plasma CVD device which comprises a high frequency electrode, a susceptor electrode, and two matching box for impedance matching between the electrodes and a power supply, wherein one side electrode constituting a tuning condenser of a matching box toward the high frequency electrode is the high frequency electrode; placing a substrate on the susceptor electrode; applying high frequency electric power on the high frequency electrode and the susceptor electrode respectively; and forming a silicon oxide layer on the substrate by generating plasma with using a reaction gas of which main reaction gas is a mixing gas of monosilane and nitrous oxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.