Common source transistor capacitor stack
US6337497B1 · kind B1 · utility
54Cited by
28References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 16, 1997 |
| Grant date | Jan 8, 2002 |
| Priority date | — |
| Expiry date | May 16, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/482
Abstract
New arrangement of a vertical field effect transistor and a capacitor together forming a memory cell which in turn may be the basic building block of a memory chip, such as a very high density DRAM. The capacitor's first electrode is connected to the drain of the transistor. The transistor's source is connected to the sources of other transistors, the gate is connected to a word line, and the second electrode of said capacitor is connected to a bit line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.