Semiconductor device having directionally balanced gates and manufacturing method
US6337498B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 12, 1999 |
| Grant date | Jan 8, 2002 |
| Priority date | — |
| Expiry date | Feb 12, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/519
Abstract
A semiconductor device such as an IGBT having trench gates in a form of stripes, and manufacturing method, wherein concentration of stresses in only a single direction is relieved and the generation of a leakage current and crystal defects in the IGBT is prevented. In one embodiment, the inside of a terminal area of an IGBT is divided into a single gate pad area and plural element areas by a wiring area. The respective element areas are arranged in such a manner that the directions of trench gates formed in the respective element areas cross at right angles with respect to the directions of trench gates of respective adjacent element areas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.