Method of forming Group II metal-containing films utilizing Group II MOCVD source reagents
US6338873B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 6, 2000 |
| Grant date | Jan 15, 2002 |
| Priority date | — |
| Expiry date | Jul 6, 2020 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/409
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Novel Group II metal MOCVD precursor compositions are described having utility for MOCVD of the corresponding Group II metal-containing films. The complexes are Group II metal &bgr;-diketonate Lewis base adducts having ligands such as: (i) amines bearing terminal NH2 groups; (ii) imine ligands formed as amine (i)/carbonyl reaction products; (iii) combination of two or more of the foregoing ligands (i)-(ii), and (iv) combination of one or more of the foregoing ligands (i)-(ii) with one or more other ligands or solvents. The source reagent complexes of barium and strontium are usefully employed in the formation of barium strontium titanate and other Group II doped thin-films on substrates for microelectronic device applications, such as integrated circuits, ferroelectric memories, switches, radiation detectors, thin-film capacitors, microelectromechanical structures (MEMS) and holographic storage media.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.