Mask with linewidth compensation and method of making same
US6338921B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 7, 2000 |
| Grant date | Jan 15, 2002 |
| Priority date | — |
| Expiry date | Jan 7, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/36
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A mask (50′) with linewidth compensation and a method of making same. The mask provides for optimized imaging of isolated patterns (64) and nested patterns (70) present on the same mask. The compensated mask is formed from an uncompensated mask (50) and comprises an upper surface (56) upon which the isolated and nested patterns are formed. The isolated pattern comprises a first segment (76) having first sidewalls (76S). The nested pattern comprises second segments (72) proximate each other and having second sidewalls (72S). A partial conformal layer (86) covers the first segment and has feet (90) outwardly extending a distance d from the first sidewalls along the upper surface. The feet are preferably of a thickness that partially transmits exposure light.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.