Patent · US Expired

Mask with linewidth compensation and method of making same

US6338921B1 · kind B1 · utility

3Cited by
16References
52Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 7, 2000
Grant dateJan 15, 2002
Priority date
Expiry dateJan 7, 2020

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG03F1/36
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

A mask (50′) with linewidth compensation and a method of making same. The mask provides for optimized imaging of isolated patterns (64) and nested patterns (70) present on the same mask. The compensated mask is formed from an uncompensated mask (50) and comprises an upper surface (56) upon which the isolated and nested patterns are formed. The isolated pattern comprises a first segment (76) having first sidewalls (76S). The nested pattern comprises second segments (72) proximate each other and having second sidewalls (72S). A partial conformal layer (86) covers the first segment and has feet (90) outwardly extending a distance d from the first sidewalls along the upper surface. The feet are preferably of a thickness that partially transmits exposure light.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.