Resist compositions and patterning process
US6338931B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 15, 2000 |
| Grant date | Jan 15, 2002 |
| Priority date | — |
| Expiry date | Aug 15, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/106
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A chemical amplification type resist composition contains as a photoacid generator a sulfonyldiazomethane compound of the formula (1): wherein R1 is C1-10 alkyl or C6-14 aryl, R2 is C1-6 alkyl, G is SO2 or CO, R3 is C1-10 alkyl or C6-14 aryl, p is an integer of 0 to 4, q is an integer of 1 to 5, 1≦p+q≦5, n is 1 or 2, m is 0 or 1, and n+m=2. The composition is suited for microfabrication, especially by deep UV lithography because of many advantages including improved resolution, minimized line width variation or shape degradation even on long-term PED, minimized debris after coating, development and peeling, and improved pattern profile after development.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.