High-permittivity dielectric capacitor for a semiconductor device and method for fabricating the same
US6338995B1 · kind B1 · utility
13Cited by
12References
3Claims
0Family size
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Key dates
| Filing date | Aug 4, 1999 |
| Grant date | Jan 15, 2002 |
| Priority date | — |
| Expiry date | Aug 4, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/68
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A high-permittivity dielectric capacitor and a fabrication method thereof are provided. The capacitor uses a tantalum oxynitride film as a high-permittivity dielectric film. The tantalum oxynitride film is deposited by chemical vapor deposition using tantalum ethoxide gas as a source of tantalum and oxygen and ammonia gas as a source of nitrogen. The tantalum oxynitride film has a high permittivity, a high thermal stability and a low interface heterogeneity between upper and lower electrodes. Thus, the current leakage due to oxygen vacancy in the film can be reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.